SAMSUNG PM9B1 512GB M.2 2280 PCIe 4.0 x4 NVMe – Up to 3500/2500 MB/s
18 900 DA
SAMSUNG PM9B1 512GB M.2 NVMe SSD
Product Description
The Samsung PM9B1 512GB is an OEM NVMe solid-state drive designed for modern PCs and laptops, combining a compact M.2 2280 form factor with a PCIe 4.0 x4 interface. It uses Samsung V-NAND TLC flash memory and NVMe technology to provide fast system boot times, application loading, file transfers and responsive everyday computing.
The verified 512GB M.2 2280 version is identified as Samsung MZVL4512HBLU-00B07. sequential performance of up to 3,500 MB/s read and 2,500 MB/s write, with random performance reaching approximately 430K IOPS read and 400K IOPS write.
Its PCIe Gen4 x4 interface provides substantially greater bandwidth than PCIe Gen3 NVMe drives when installed in a compatible Gen4 slot. The M.2 2280 design measures approximately 22 × 80 mm, making it suitable for compatible desktop PCs, notebooks and other systems equipped with an M.2 NVMe slot.
Full Specifications
| Specification | Details |
|---|---|
| Brand | Samsung |
| Series | PM9B1 |
| Product Type | Internal NVMe SSD |
| Capacity | 512 GB |
| Model / Part Number | MZVL4512HBLU-00B07 |
| Form Factor | M.2 2280 |
| Dimensions | Approx. 22 × 80 mm |
| Interface | PCIe 4.0 x4 |
| Protocol | NVMe |
| Memory Type | Samsung V-NAND TLC |
| Sequential Read | Up to 3,500 MB/s |
| Sequential Write | Up to 2,500 MB/s |
| Random Read | Up to 430,000 IOPS |
| Random Write | Up to 400,000 IOPS |
| Controller | Marvell 88SS1322, according to trusted SSD database documentation |
| DRAM Cache | No dedicated DRAM; uses Host Memory Buffer (HMB) |
| HMB | Yes |
| SLC Cache | Yes |
| NAND Generation | Samsung V-NAND V6 |
| NAND Type | TLC |
| Application | PC / Laptop |
| Interface Generation | PCIe Gen4 |
| Cooling | No integrated heatsink |
| Color | Black / PCB-based OEM design |
| EAN supplied | 595669962355 |
Technical references identify the 512GB MZVL4512HBLU as a PCIe 4.0 x4, M.2 2280 NVMe drive with Samsung V-NAND TLC, 3,500 MB/s sequential read, 2,500 MB/s sequential write, 430K random-read IOPS and 400K random-write IOPS.
Key Features
- 512GB storage capacity for operating systems, applications, games and personal files.
- PCIe 4.0 x4 interface for high-bandwidth NVMe storage performance.
- M.2 2280 form factor compatible with systems supporting standard 22 × 80 mm M.2 NVMe drives.
- Samsung V-NAND TLC technology for efficient solid-state storage.
- Up to 3,500 MB/s sequential read speed for rapid loading and file access.
- Up to 2,500 MB/s sequential write speed for fast file transfers and data creation.
- Up to 430K / 400K IOPS random read/write for responsive access to numerous small files and applications.
- NVMe architecture optimized for modern PCIe-based storage.
- HMB support rather than a dedicated onboard DRAM cache.
Compatibility
The Samsung PM9B1 512GB is intended for PCs and laptops equipped with an M.2 2280 NVMe slot supporting PCIe connectivity. On a PCIe 4.0 x4 platform, it can operate at its intended interface performance. Compatibility and achievable speeds depend on the host system, M.2 slot configuration, firmware, workload and thermal conditions.
If installed in a system whose M.2 slot operates at PCIe 3.0, the SSD will operate at the lower PCIe-generation bandwidth rather than its full Gen4 potential.

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